Photoluminescence studies of Mg-doped and Si-doped gallium nitride epilayers
We present time-, temperature- and intensity-dependent photoluminescence measurements of undoped, n-type and p-type GaN epilayers. In the nominally undoped samples we observe at low temperatures the trapping of free excitons by neutral donors and subsequent radiative recombination. In the n-type Si-...
| Main Authors: | , , , , , |
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| Format: | Conference item |
| Published: |
1998
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