On the difference in valence electron plasmon energy and density of states between beta- and cubic-Si3N4
<p>Core and valence level photoemissionspectra of β- and cubic-Si<sub>3</sub>N<sub>4</sub> have been measured under monochromatic Al<em>K</em>α excitation. Strong satellites to high binding energy of the core lines are shown to arise from excitation of valen...
| 主要な著者: | , , , |
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| フォーマット: | Journal article |
| 言語: | English |
| 出版事項: |
American Institute of Physics
2003
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| 要約: | <p>Core and valence level photoemissionspectra of β- and cubic-Si<sub>3</sub>N<sub>4</sub> have been measured under monochromatic Al<em>K</em>α excitation. Strong satellites to high binding energy of the core lines are shown to arise from excitation of valence electron plasmons during the photoemission process. An increase in the plasmonenergy from 23.45 eV for β-Si<sub>3</sub>N<sub>4</sub> to 26.10 eV for cubic-Si<sub>3</sub>N<sub>4</sub> is of the magnitude expected from the 26% increase in the valence electron density associated with the shock-induced β-to-cubic phase transition. The measuredvalence banddensity of states for cubic-Si<sub>3</sub>N<sub>4</sub> is in agreement with theoretical calculations.</p> |
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