Quantitative estimate of H abstraction by thermal Si H3 on hydrogenated Si (001) (2×1)
A very high probability (∼60%) for H abstraction induced by Si H3 thermal impacts on the Si (001) (2×1) hydrogenated surface is reported, as a consequence of the Eley-Rideal mechanism by which a silane molecule is formed. The reaction probability is computed within a fully dynamical approach. After...
| Үндсэн зохиолчид: | , , , , |
|---|---|
| Формат: | Journal article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2007
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