A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
The use of 3 MeV protons for ion beam induced charge (IBIC) and 15 keV electrons for electron beam induced current (EBIC) microscopy to image MeV proton induced defects in silicon are compared here. It is shown that IBIC is considerably more sensitive to the detection of very deep defects because of...
| Main Authors: | , , |
|---|---|
| Format: | Conference item |
| Published: |
1998
|