A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
The use of 3 MeV protons for ion beam induced charge (IBIC) and 15 keV electrons for electron beam induced current (EBIC) microscopy to image MeV proton induced defects in silicon are compared here. It is shown that IBIC is considerably more sensitive to the detection of very deep defects because of...
| Main Authors: | , , |
|---|---|
| Format: | Conference item |
| Published: |
1998
|
| _version_ | 1797077848329027584 |
|---|---|
| author | Breese, M Amaku, A Wilshaw, P |
| author_facet | Breese, M Amaku, A Wilshaw, P |
| author_sort | Breese, M |
| collection | OXFORD |
| description | The use of 3 MeV protons for ion beam induced charge (IBIC) and 15 keV electrons for electron beam induced current (EBIC) microscopy to image MeV proton induced defects in silicon are compared here. It is shown that IBIC is considerably more sensitive to the detection of very deep defects because of the greater range of 3 MeV protons compared with 15 keV electrons. An analysis based on the different ranges of the two charged particles is used to calculate the difference in defect contrast, and good quantitive agreement is shown with measured contrast values. (C) 1998 Elsevier Science B.V. |
| first_indexed | 2024-03-07T00:23:54Z |
| format | Conference item |
| id | oxford-uuid:7d78de54-221a-4bf8-b791-df1b58563b53 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T00:23:54Z |
| publishDate | 1998 |
| record_format | dspace |
| spelling | oxford-uuid:7d78de54-221a-4bf8-b791-df1b58563b532022-03-26T21:03:48ZA comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysisConference itemhttp://purl.org/coar/resource_type/c_5794uuid:7d78de54-221a-4bf8-b791-df1b58563b53Symplectic Elements at Oxford1998Breese, MAmaku, AWilshaw, PThe use of 3 MeV protons for ion beam induced charge (IBIC) and 15 keV electrons for electron beam induced current (EBIC) microscopy to image MeV proton induced defects in silicon are compared here. It is shown that IBIC is considerably more sensitive to the detection of very deep defects because of the greater range of 3 MeV protons compared with 15 keV electrons. An analysis based on the different ranges of the two charged particles is used to calculate the difference in defect contrast, and good quantitive agreement is shown with measured contrast values. (C) 1998 Elsevier Science B.V. |
| spellingShingle | Breese, M Amaku, A Wilshaw, P A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis |
| title | A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis |
| title_full | A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis |
| title_fullStr | A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis |
| title_full_unstemmed | A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis |
| title_short | A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis |
| title_sort | comparison between the use of ebic and ibic microscopy for semiconductor defect analysis |
| work_keys_str_mv | AT breesem acomparisonbetweentheuseofebicandibicmicroscopyforsemiconductordefectanalysis AT amakua acomparisonbetweentheuseofebicandibicmicroscopyforsemiconductordefectanalysis AT wilshawp acomparisonbetweentheuseofebicandibicmicroscopyforsemiconductordefectanalysis AT breesem comparisonbetweentheuseofebicandibicmicroscopyforsemiconductordefectanalysis AT amakua comparisonbetweentheuseofebicandibicmicroscopyforsemiconductordefectanalysis AT wilshawp comparisonbetweentheuseofebicandibicmicroscopyforsemiconductordefectanalysis |