Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy

Ижил төстэй зүйлс

• Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
  -н: Zou, J, зэрэг
  Хэвлэсэн: (1997)
• SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
  -н: Oleg V. Devitsky, зэрэг
  Хэвлэсэн: (2022-05-01)
• Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
  -н: Liao, X, зэрэг
  Хэвлэсэн: (1999)
• Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
  -н: Liao, X, зэрэг
  Хэвлэсэн: (1998)
• Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
  -н: Zou, J, зэрэг
  Хэвлэсэн: (1999)