Cross section and resonance effects in photoemission from Sn-doped In2O3(111)

Photoemission spectra of Sn-doped In 2O 3(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases wit...

詳細記述

書誌詳細
主要な著者: Zhang, K, Payne, D, Egdell, R
フォーマット: Journal article
言語:English
出版事項: 2012