RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
Autors principals: | Wilshaw, P, Fell, T, Booker, G |
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Format: | Conference item |
Publicat: |
1989
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Ítems similars
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AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
per: Galloway, S, et al.
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PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
per: Demenet, J, et al.
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MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
per: Alexander, H, et al.
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RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
per: Fell, T, et al.
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RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
per: Fell, T, et al.
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