RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE

ग्रंथसूची विवरण
मुख्य लेखकों:	Wilshaw, P, Fell, T, Booker, G
स्वरूप:	Conference item
प्रकाशित:	1989

समान संसाधन

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
द्वारा: Galloway, S, और अन्य
प्रकाशित: (1993)

PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
द्वारा: Demenet, J, और अन्य
प्रकाशित: (1989)

MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
द्वारा: Alexander, H, और अन्य
प्रकाशित: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1989)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
द्वारा: Wilshaw, P, और अन्य
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VLSI fabrication principles : silicon and gallium arsenide /
द्वारा: 359597 Ghandi, Sorab K.
प्रकाशित: (1994)

VLSI fabrication principles: silicon and gallium arsenide/
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FRACTURE AND CRACK TIP PLASTICITY IN SILICON AND GALLIUM-ARSENIDE
द्वारा: Michot, G, और अन्य
प्रकाशित: (1989)

Gallium arsenide /
द्वारा: Blakemore, John Sydney
प्रकाशित: (1987)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1989)

Gallium arsenide : proceedings /
द्वारा: International Gallium Arsenide Symposium, (2nd : 1968 Dallas, Texas), और अन्य
प्रकाशित: (1969)

Gallium interstitial contributions to diffusion in gallium arsenide
द्वारा: Joseph T. Schick, और अन्य
प्रकाशित: (2011-09-01)

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
द्वारा: Fell, T, और अन्य
प्रकाशित: (1991)

Dielectric films on gallium arsenide /
द्वारा: 351413 Croydon, W. F., और अन्य
प्रकाशित: (1981)

Gallium arsenide and related compounds,
द्वारा: International Symposium on Gallium Arsenide and related compounds (5th : 1974 : Deauville), और अन्य
प्रकाशित: (1975)

Gallium arsenide and related compounds /
द्वारा: 472172 International Symposium on Gallium Arsenide and Related Compounds (13th : 1986 : Las Vegas), और अन्य
प्रकाशित: (1987)

Gallium arsenide and related compounds /
द्वारा: International Symposium on Gallium Arsenide and Related Compounds (6th, 1976 : Edinburg), और अन्य
प्रकाशित: (1977)

Experiments in gallium arsenide technology /
द्वारा: 225814 Branning, D. J., और अन्य
प्रकाशित: (1988)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1993)

Gallium arsenide nanoparticles: synthesis and characterisation
द्वारा: Malik, M, और अन्य
प्रकाशित: (2003)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1991)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1983)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1985)

Growth rate gallium arsenide nanowires /
द्वारा: Rosnita Muhammad, 1972-, author, और अन्य
प्रकाशित: (2009)

Gallium arsenide and related compounds 1985 /
द्वारा: International Symposium on Gallium Arsenide and Related Compounds (12th : 1985 : Karuizawa, Japan)
प्रकाशित: (1986)

Gallium arsenide and related compounds : proccedings /
द्वारा: International Symposium on Gallium Arsenide and Related Compounds (6th : 1976 : St. Louis), और अन्य
प्रकाशित: (1977)

Gallium arsenide and related compounds : proceedings
द्वारा: International Symposium on Gallium Arsenide and Related Compounds (4th : 1972 : Boulder, Colorado)
प्रकाशित: (1973)

Gallium arsenide and related compounds, 1978 /
द्वारा: International Symposium on Gallium Arsenide and Related Compounds (7th : 1978 : St. Louis), और अन्य
प्रकाशित: (1979)

Gallium arsenide and related compounds : proceedings /
द्वारा: International Symposium on Gallium Arsenide and Related Compounds, (3rd : 1970 : Aachen), और अन्य
प्रकाशित: (1971)

Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI
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Gallium arsenide pixel detectors for medical imaging
द्वारा: DaVia, C, और अन्य
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ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1982)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
द्वारा: Ourmazd, A, और अन्य
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Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)
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