Onset of slip in silicon containing oxide precipitates
We report a study of the behavior of dislocations at oxide precipitates in (001) Czochralski silicon wafers for different oxide-precipitate sizes (100-600 nm), densities (108 - 1011 cm-3), and background oxygen concentrations (7.7 × 1017-10.35 × 1017 cm-3) using a bending technique with annular knif...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2001
|