Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

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We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe- Al2 O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system give...

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Detaylı Bibliyografya
Asıl Yazarlar: Robertson, J, Zhong, G, Telg, H, Thomsen, C, Warner, J, Briggs, G, Dettlaff-Weglikowska, U, Roth, S
Materyal Türü: Journal article
Dil:English
Baskı/Yayın Bilgisi: 2008
Diğer Bilgiler
Özet:We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe- Al2 O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 13 of metallic tubes. © 2008 American Institute of Physics.

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