A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process
For the first time, we have demonstrated a 32nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby leakage transistors and functional high-density SRAM with a cell size of 0.157 μm2. Record NMOS/PMOS drive currents of 1000/575 μA/μm, respectively, have been achieved at 1 n...
Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , |
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Format: | Conference item |
Published: |
2008
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