A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process

For the first time, we have demonstrated a 32nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby leakage transistors and functional high-density SRAM with a cell size of 0.157 μm2. Record NMOS/PMOS drive currents of 1000/575 μA/μm, respectively, have been achieved at 1 n...

Full description

Bibliographic Details
Main Authors:	Chen, X, Samavedam, S, Narayanan, V, Stein, K, Hobbs, C, Baiocco, C, Li, W, Jaeger, D, Zaleski, M, Yang, H, Kim, N, Lee, Y, Zhang, D, Kang, L, Chen, J, Zhuang, H, Sheikh, A, Wallner, J, Aquilino, M, Han, J, Jin, Z, Li, J, Massey, G, Kalpat, S, Jha, R
Format:	Conference item
Published:	2008

A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process

Similar Items