Novel growth and properties of GaAs nanowires on Si substrates.

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin...

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ग्रंथसूची विवरण
मुख्य लेखकों:	Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Choi, D, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J
स्वरूप:	Journal article
भाषा:	English
प्रकाशित:	2010

Novel growth and properties of GaAs nanowires on Si substrates.

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