High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
III-V semiconductor nanowires hold outstanding potential as key component for future photonic and electronic devices, among which GaAs/AlGaAs heterostructure nanowires wires show particular promise. However, due to the large surface-to-volume ratio, the carrier lifetime and mobility of GaAs nanowire...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2013
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