Stress and relief of misfit strain of Ge/Si(111)
The intrinsic stress and morphology of the Stranski-Krastanow system Ge/Si(111) have been investigated at deposition temperatures of 700-950 K. In a broad range of intermediate temperatures, only one distinct decline of stress is observed at the onset of three-dimensional islanding. Supported by a r...
| Hoofdauteurs: | , , , , , |
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| Formaat: | Journal article |
| Taal: | English |
| Gepubliceerd in: |
1998
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