Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structures
Electron microscopy techniques have great potential for dopant profiling because of their high spatial resolution in two-dimensions (2-D). Previous work has shown that contrast arises between p-, n- and i-doped material when observed in the secondary electron (SE) mode of a scanning electron microsc...
| Main Authors: | , , , |
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| Format: | Conference item |
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1997
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