Cryogenic rds(on) of a GaN power transistor at high currents
The dramatic reduction in the on-state resistance of Gallium Nitride (GaN) HEMTs at cryogenic temperatures can be exploited to reduce conduction losses in power converters. In this paper, we present a low-cost and easily implementable methodology for the characterisation of the on-state resistance o...
| 主要な著者: | , , |
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| フォーマット: | Conference item |
| 言語: | English |
| 出版事項: |
IEEE
2023
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| 要約: | The dramatic reduction in the on-state resistance of Gallium Nitride (GaN) HEMTs at cryogenic temperatures can be exploited to reduce conduction losses in power converters. In this paper, we present a low-cost and easily implementable methodology for the characterisation of the on-state resistance of power transistors below room temperature. Experimental results for a 650 V 30 A GaN HEMT are compared to measurements in the existing literature. In addition, the variation of the onstate resistance to drain-source current at currents in excess of the datasheet rating of the transistor is examined. Thermal equilibrium is obtained with continuous high currents. The conditions for the onset of thermal instability are analysed and compared to experimental results. Thermally stable operation at three times the room-temperature rating of the transistor is demonstrated at cryogenic temperatures. |
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