Cryogenic rds(on) of a GaN power transistor at high currents
The dramatic reduction in the on-state resistance of Gallium Nitride (GaN) HEMTs at cryogenic temperatures can be exploited to reduce conduction losses in power converters. In this paper, we present a low-cost and easily implementable methodology for the characterisation of the on-state resistance o...
المؤلفون الرئيسيون: | Bruford, J, Rogers, DJ, Rodriguez, T |
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التنسيق: | Conference item |
اللغة: | English |
منشور في: |
IEEE
2023
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مواد مشابهة
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GaN transistors for efficient power conversion /
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