Cryogenic rds(on) of a GaN power transistor at high currents

Cryogenic rds(on) of a GaN power transistor at high currents

The dramatic reduction in the on-state resistance of Gallium Nitride (GaN) HEMTs at cryogenic temperatures can be exploited to reduce conduction losses in power converters. In this paper, we present a low-cost and easily implementable methodology for the characterisation of the on-state resistance o...

Bibliografiset tiedot
Päätekijät:	Bruford, J, Rogers, DJ, Rodriguez, T
Aineistotyyppi:	Conference item
Kieli:	English
Julkaistu:	IEEE 2023

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