Cryogenic rds(on) of a GaN power transistor at high currents
The dramatic reduction in the on-state resistance of Gallium Nitride (GaN) HEMTs at cryogenic temperatures can be exploited to reduce conduction losses in power converters. In this paper, we present a low-cost and easily implementable methodology for the characterisation of the on-state resistance o...
| المؤلفون الرئيسيون: | , , |
|---|---|
| التنسيق: | Conference item |
| اللغة: | English |
| منشور في: |
IEEE
2023
|