Cryogenic rds(on) of a GaN power transistor at high currents
The dramatic reduction in the on-state resistance of Gallium Nitride (GaN) HEMTs at cryogenic temperatures can be exploited to reduce conduction losses in power converters. In this paper, we present a low-cost and easily implementable methodology for the characterisation of the on-state resistance o...
| Главные авторы: | , , |
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| Формат: | Conference item |
| Язык: | English |
| Опубликовано: |
IEEE
2023
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