Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL

類似資料

• Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
  著者:: Nicholas, R, 等
  出版事項: (2004)
• Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
  著者:: Norman, A, 等
  出版事項: (1997)
• MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
  著者:: Mock, P, 等
  出版事項: (2001)
• Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study
  著者:: Alphandery, E, 等
  出版事項: (1999)
• Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field
  著者:: Alphandery, E, 等
  出版事項: (2002)