Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL
Transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) with and without additional magnetic fields (magneto-PL) were employed to study metal organic vapour phase epitaxy (MOVPE) grown, self-assembled InSb rich quantum dots (QDs) embedded in InAs and GaSb mat...
| Main Authors: | , , , , |
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| Format: | Conference item |
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1999
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| _version_ | 1797080644001464320 |
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| author | Mock, P Booker, G Alphandery, E Nicholas, R Mason, N |
| author_facet | Mock, P Booker, G Alphandery, E Nicholas, R Mason, N |
| author_sort | Mock, P |
| collection | OXFORD |
| description | Transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) with and without additional magnetic fields (magneto-PL) were employed to study metal organic vapour phase epitaxy (MOVPE) grown, self-assembled InSb rich quantum dots (QDs) embedded in InAs and GaSb matrices. Depending on the growth conditions, coherently strained, partly relaxed, and completely relaxed InSb rich agglomerates were observed by means of TEM; AFM delivered more reliable QD number densities and accurate heights of InSb islands on GaSb. For the case of InSb embedded in GaSb, PL showed QD emission at 1.69 mum and wetting layer (WL) emission at 1.61 mum. |
| first_indexed | 2024-03-07T01:03:02Z |
| format | Conference item |
| id | oxford-uuid:8a5dcbc0-cff8-4331-8e0a-9c0e56537a37 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T01:03:02Z |
| publishDate | 1999 |
| record_format | dspace |
| spelling | oxford-uuid:8a5dcbc0-cff8-4331-8e0a-9c0e56537a372022-03-26T22:31:03ZSelf-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PLConference itemhttp://purl.org/coar/resource_type/c_5794uuid:8a5dcbc0-cff8-4331-8e0a-9c0e56537a37Symplectic Elements at Oxford1999Mock, PBooker, GAlphandery, ENicholas, RMason, NTransmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) with and without additional magnetic fields (magneto-PL) were employed to study metal organic vapour phase epitaxy (MOVPE) grown, self-assembled InSb rich quantum dots (QDs) embedded in InAs and GaSb matrices. Depending on the growth conditions, coherently strained, partly relaxed, and completely relaxed InSb rich agglomerates were observed by means of TEM; AFM delivered more reliable QD number densities and accurate heights of InSb islands on GaSb. For the case of InSb embedded in GaSb, PL showed QD emission at 1.69 mum and wetting layer (WL) emission at 1.61 mum. |
| spellingShingle | Mock, P Booker, G Alphandery, E Nicholas, R Mason, N Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL |
| title | Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL |
| title_full | Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL |
| title_fullStr | Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL |
| title_full_unstemmed | Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL |
| title_short | Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL |
| title_sort | self assembled insb quantum dots in inas and gasb matrices assessed by means of tem afm and pl |
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