GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM

GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM

The behavior of semiconductors is affected by the presence and distribution of dopants. The properties involved range from electrical resistivity and carrier concentration to grain boundary mobility and self-diffusion. Understanding these phenomena necessitates the characterization of defect structu...

書目詳細資料
Main Authors:	Smith, D, Grovenor, C, Batson, P, Wong, C
格式:	Journal article
語言:	English
出版:	1984

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