GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM
The behavior of semiconductors is affected by the presence and distribution of dopants. The properties involved range from electrical resistivity and carrier concentration to grain boundary mobility and self-diffusion. Understanding these phenomena necessitates the characterization of defect structu...
| المؤلفون الرئيسيون: | , , , |
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| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
1984
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