Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperatur...
| Главные авторы: | , , , , , , , |
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| Формат: | Conference item |
| Опубликовано: |
2005
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