Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperatur...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Taylor, R, Rice, J, Na, J, Robinson, J, Martin, R, Edwards, P, Watson, I, Liu, C
Μορφή:	Conference item
Έκδοση:	2005

Παρόμοια τεκμήρια

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