Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperatur...

Bibliografiset tiedot
Päätekijät:	Taylor, R, Rice, J, Na, J, Robinson, J, Martin, R, Edwards, P, Watson, I, Liu, C
Aineistotyyppi:	Conference item
Julkaistu:	2005

Samankaltaisia teoksia

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Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
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Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
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Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots
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Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
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Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
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On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
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Time-resolved dynamics in single InGaN quantum dots
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Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
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Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
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