Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperatur...

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Bibliografiska uppgifter
Huvudupphovsmän:	Taylor, R, Rice, J, Na, J, Robinson, J, Martin, R, Edwards, P, Watson, I, Liu, C
Materialtyp:	Conference item
Publicerad:	2005

Liknande verk

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
av: Edwards, P, et al.
Publicerad: (2004)

Luminescence properties of isolated InGaN/GaN quantum dots
av: Martin, R, et al.
Publicerad: (2005)

Progress in the optical studies of single InGaN/GaN quantum dots
av: Jarjour, A, et al.
Publicerad: (2007)

Two-photon absorption in single site-controlled InGaN/GaN quantum dots
av: Jarjour, A, et al.
Publicerad: (2005)

Two-photon absorption from single InGaN/GaN quantum dots
av: Jarjour, A, et al.
Publicerad: (2006)

Electrically driven single InGaN/GaN quantum dot emission
av: Jarjour, A, et al.
Publicerad: (2008)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
av: Park, Y, et al.
Publicerad: (2010)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
av: Jarjour, A, et al.
Publicerad: (2007)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
av: Oliver, R, et al.
Publicerad: (2003)

Dynamics of single InGaN quantum dots
av: Taylor, R, et al.
Publicerad: (2004)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
av: Chua, Soo-Jin, et al.
Publicerad: (2003)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
av: Song, T.L., et al.
Publicerad: (2003)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
av: Jarjour, A, et al.
Publicerad: (2007)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
av: Jarjour, A, et al.
Publicerad: (2007)

InGaN quantum dots grown by MOVPE via a droplet epitaxy route
av: Rice, J, et al.
Publicerad: (2004)

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
av: Collins, D, et al.
Publicerad: (2009)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
av: Haruka Matsuura, et al.
Publicerad: (2019-04-01)

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots
av: Kanta Patra, S, et al.
Publicerad: (2017)

Biexciton and exciton dynamics in single InGaN quantum dots
av: Rice, J, et al.
Publicerad: (2005)

Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs
av: Chan, C, et al.
Publicerad: (2012)

Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)
av: Yuebo Liu, et al.
Publicerad: (2021-01-01)

Carrier localization mechanisms in InGaN/GaN quantum wells
av: Watson-Parris, D, et al.
Publicerad: (2011)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
av: Liwen Cheng, et al.
Publicerad: (2021-08-01)

Time-resolved dynamics in single InGaN quantum dots
av: Robinson, J, et al.
Publicerad: (2003)

Growth modes in heteroepitaxy of InGaN on GaN
av: Oliver, R, et al.
Publicerad: (2005)

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy
av: Xue Zhang, et al.
Publicerad: (2021-10-01)

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
av: Park, Y, et al.
Publicerad: (2012)

Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays
av: Konrad Maier, et al.
Publicerad: (2019-06-01)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
av: Na, J, et al.
Publicerad: (2006)

Temporal variation in photoluminescence from single InGaN quantum dots
av: Rice, J, et al.
Publicerad: (2004)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
av: Kyaw, Zabu, et al.
Publicerad: (2014)

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters
av: Arnob Ghosh, et al.
Publicerad: (2024-02-01)

Time-resolved dynamics in single InGaN quantum dots
av: Taylor, R, et al.
Publicerad: (2005)

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
av: Park, Y, et al.
Publicerad: (2011)

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
av: Hartono, Haryono, et al.
Publicerad: (2004)

InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC
av: Bosch, Julien, et al.
Publicerad: (2023)

Simulation of the quantum-confined stark effect in a single InGaN quantum dot
av: Lee, K, et al.
Publicerad: (2004)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
av: Na, J, et al.
Publicerad: (2006)

Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
av: Puchtler, T, et al.
Publicerad: (2016)

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot
av: Jarjour, A, et al.
Publicerad: (2007)