CHARACTERIZATION OF BANDGAP STATES IN V-DOPED TIO2 BY HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTROSCOPY

Core- and valence-level photoemission spectra of V-doped TiO2 have been measured with monochromatic Al-Kα X-ray excitation. UHV annealing of as-presented samples leads to the appearance of a photoemission peak above the O 2p valence band within the bulk bandgap of TiO2. Simultaneous changes in V cor...

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Detalhes bibliográficos
Principais autores: Dixon, R, Egdell, R, Beamson, G
Formato: Journal article
Idioma:English
Publicado em: 1995