CHARACTERIZATION OF BANDGAP STATES IN V-DOPED TIO2 BY HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTROSCOPY
Core- and valence-level photoemission spectra of V-doped TiO2 have been measured with monochromatic Al-Kα X-ray excitation. UHV annealing of as-presented samples leads to the appearance of a photoemission peak above the O 2p valence band within the bulk bandgap of TiO2. Simultaneous changes in V cor...
| Main Authors: | , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
1995
|
| Summary: | Core- and valence-level photoemission spectra of V-doped TiO2 have been measured with monochromatic Al-Kα X-ray excitation. UHV annealing of as-presented samples leads to the appearance of a photoemission peak above the O 2p valence band within the bulk bandgap of TiO2. Simultaneous changes in V core-level spectra allow this peak to be identified as arising from electrons trapped on vanadium ions to generate localised VIV centres. |
|---|