GASB HETEROSTRUCTURES GROWN BY MOVPE

GASB HETEROSTRUCTURES GROWN BY MOVPE

Библиографические подробности
Главные авторы:	Chidley, E, Haywood, S, Mallard, R, Mason, N, Nicholas, R, Walker, P, Warburton, R
Формат:	Journal article
Опубликовано:	1988

Схожие документы

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
по: Haywood, S, и др.
Опубликовано: (1991)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
по: Warburton, R, и др.
Опубликовано: (1991)

GROWTH OF GASB BY MOVPE
по: Haywood, S, и др.
Опубликовано: (1988)

GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
по: Chidley, E, и др.
Опубликовано: (1989)

GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
по: Haywood, S, и др.
Опубликовано: (1989)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
по: Lakrimi, M, и др.
Опубликовано: (1991)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
по: Lakrimi, M, и др.
Опубликовано: (1991)

PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
по: Chidley, E, и др.
Опубликовано: (1991)

CYCLOTRON-RESONANCE IN INAS/GASB HETEROSTRUCTURES
по: Sundaram, G, и др.
Опубликовано: (1992)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
по: Lakrimi, M, и др.
Опубликовано: (1992)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
по: Krier, A, и др.
Опубликовано: (1994)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
по: Maxim A. Ladugin, и др.
Опубликовано: (2019-06-01)

DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE
по: Aardvark, A, и др.
Опубликовано: (1993)

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
по: Mock, P, и др.
Опубликовано: (2001)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
по: Mallard, R, и др.
Опубликовано: (1989)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
по: Mallard, R, и др.
Опубликовано: (1989)

MAGNETOTRANSPORT STUDIES OF GASB/INAS CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS
по: Dalton, K, и др.
Опубликовано: (1993)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
по: Norman, A, и др.
Опубликовано: (1997)

HIGH-PRESSURE INVESTIGATION OF GASB AND GA1-XINXSB/GASB QUANTUM-WELLS
по: Warburton, R, и др.
Опубликовано: (1991)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
по: Booker, G, и др.
Опубликовано: (1997)

Thermopower and conductivity of InAs/GaSb crossed-gap heterostructures in a magnetic field
по: Cao, S, и др.
Опубликовано: (1996)

STRAIN RECONSTRUCTION OF THE VALENCE BAND IN GA1-XINXSB GASB QUANTUM-WELLS
по: Warburton, R, и др.
Опубликовано: (1990)

MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
по: Mock, P, и др.
Опубликовано: (2000)

Growth and application of group III - Antimonides by MOVPE
по: Klipstein, P, и др.
Опубликовано: (1996)

A MAGNETOOPTICAL STUDY OF COUPLED QUANTUM-WELLS IN STRAINED GAINSB/GASB
по: Wong, S, и др.
Опубликовано: (1993)

Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation
по: Popok V.N., и др.
Опубликовано: (2018-06-01)

Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures
по: Nicholas, R, и др.
Опубликовано: (1998)

InP nanowires grown by SA-MOVPE
по: Gao, Q, и др.
Опубликовано: (2012)

STUDIES OF PIEZOELECTRIC EFFECTS IN [111] ORIENTED STRAINED GA1-XINXSB/GASB QUANTUM-WELLS
по: Lakrimi, M, и др.
Опубликовано: (1992)

STUDIES OF PIEZOELECTRIC EFFECTS IN [111] ORIENTED STRAINED GA1-XINXSB/GASB QUANTUM-WELLS
по: Lakrimi, M, и др.
Опубликовано: (1992)

Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures
по: Petchsingh, C, и др.
Опубликовано: (2004)

ORIENTATION AND PRESSURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES
по: Symons, D, и др.
Опубликовано: (1994)

CYCLOTRON-RESONANCE MEASUREMENTS OF THE HOLE MASS IN [001] AND [111] INXGA1-XSB/GASB QUANTUM-WELLS
по: Warburton, R, и др.
Опубликовано: (1993)

Electron-hole interactions and metal-insulator transitions in InAs/GaSb heterostructures
по: Nicholas, R, и др.
Опубликовано: (2001)

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
по: Allwood, D, и др.
Опубликовано: (2000)

ULTRA-HIGH MAGNETIC-FIELD CYCLOTRON-RESONANCE OF ZERO-GAP INAS/GASB SUPERLATTICES
по: Barnes, D, и др.
Опубликовано: (1993)

Temperature-dependent cyclotron resonance in a hybridized electron-hole system in InAs/GaSb heterostructures
по: Petchsingh, C, и др.
Опубликовано: (2007)

Mn DOPING OF GaN LAYERS GROWN BY MOVPE
по: Petr Šimek, и др.
Опубликовано: (2012-07-01)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
по: V. Orejuela, и др.
Опубликовано: (2024-09-01)

MAGNETOOPTICAL STUDY OF GA(1-X)IN(X)SB/GASB STRAINED-QUANTUM-WELL STRUCTURES - MINIBAND FORMATION AND VALENCE-BAND STRUCTURE
по: Wong, S, и др.
Опубликовано: (1994)