On the mechanism of recombination at oxide precipitates in silicon
Oxide precipitates are well known to degrade minority carrier lifetime in silicon, but the mechanism by which they act as recombination centres is not fully understood. We report minority carrier lifetime measurements on oxide precipitate-containing silicon which has been intentionally contaminated...
Main Authors: | Murphy, J, Bothe, K, Voronkov, V, Falster, R |
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פורמט: | Journal article |
שפה: | English |
יצא לאור: |
2013
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פריטים דומים
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Recombination at oxide precipitates in silicon
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Minority carrier lifetime in Czochralski silicon containing oxide precipitates
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The effect of oxide precipitates on minority carrier lifetime in p-type silicon
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Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
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