Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
The results of dislocation unlocking experiments using nitrogen-doped float-zone silicon are reported. Dislocation unlocking stress is measured in specimens subjected to anneals for a range of durations and temperatures. Analysis of the rate of the initial rise in unlocking stress with annealing tim...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2009
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