Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
The results of dislocation unlocking experiments using nitrogen-doped float-zone silicon are reported. Dislocation unlocking stress is measured in specimens subjected to anneals for a range of durations and temperatures. Analysis of the rate of the initial rise in unlocking stress with annealing tim...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
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2009
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| _version_ | 1797081114360152064 |
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| author | Alpass, C Murphy, J Falster, R Wilshaw, P |
| author_facet | Alpass, C Murphy, J Falster, R Wilshaw, P |
| author_sort | Alpass, C |
| collection | OXFORD |
| description | The results of dislocation unlocking experiments using nitrogen-doped float-zone silicon are reported. Dislocation unlocking stress is measured in specimens subjected to anneals for a range of durations and temperatures. Analysis of the rate of the initial rise in unlocking stress with annealing time gives an activation energy for nitrogen diffusion of 3.24 eV in the 500-750 °C temperature range. Numerical simulations of nitrogen diffusion to the dislocation core allow an approximate value of 200,000 cm2 s-1 to be estimated for the diffusivity pre-factor. These diffusion measurements are consistent with the results of higher temperature secondary ion mass spectrometry out-diffusion experiments in the literature. Other measurements made at up to 1050 °C followed by fast quenching indicate that nitrogen's ability to lock dislocations is substantially reduced at high temperatures. © 2008 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-07T01:09:55Z |
| format | Journal article |
| id | oxford-uuid:8ca4a00b-83f1-4a5e-90c9-c03aa44e0f4b |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:09:55Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | oxford-uuid:8ca4a00b-83f1-4a5e-90c9-c03aa44e0f4b2022-03-26T22:45:52ZNitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocationsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:8ca4a00b-83f1-4a5e-90c9-c03aa44e0f4bEnglishSymplectic Elements at Oxford2009Alpass, CMurphy, JFalster, RWilshaw, PThe results of dislocation unlocking experiments using nitrogen-doped float-zone silicon are reported. Dislocation unlocking stress is measured in specimens subjected to anneals for a range of durations and temperatures. Analysis of the rate of the initial rise in unlocking stress with annealing time gives an activation energy for nitrogen diffusion of 3.24 eV in the 500-750 °C temperature range. Numerical simulations of nitrogen diffusion to the dislocation core allow an approximate value of 200,000 cm2 s-1 to be estimated for the diffusivity pre-factor. These diffusion measurements are consistent with the results of higher temperature secondary ion mass spectrometry out-diffusion experiments in the literature. Other measurements made at up to 1050 °C followed by fast quenching indicate that nitrogen's ability to lock dislocations is substantially reduced at high temperatures. © 2008 Elsevier B.V. All rights reserved. |
| spellingShingle | Alpass, C Murphy, J Falster, R Wilshaw, P Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations |
| title | Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations |
| title_full | Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations |
| title_fullStr | Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations |
| title_full_unstemmed | Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations |
| title_short | Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations |
| title_sort | nitrogen in silicon diffusion at 500 750 °c and interaction with dislocations |
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