The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a combination of molecular static relaxations and a Monte Carlo process. The strain field and the displacement field of the non-uniformly alloyed quantum dot have been calculated using finite element ana...
| Main Authors: | , , |
|---|---|
| פורמט: | Conference item |
| יצא לאור: |
2004
|