The non-uniform composition profile in Ge(Si)/Si(001) quantum dots

The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a combination of molecular static relaxations and a Monte Carlo process. The strain field and the displacement field of the non-uniformly alloyed quantum dot have been calculated using finite element ana...

Bibliografiset tiedot
Päätekijät:	Lang, C, Nguyen-Manh, D, Cockayne, D
Aineistotyyppi:	Conference item
Julkaistu:	2004

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