The non-uniform composition profile in Ge(Si)/Si(001) quantum dots

The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a combination of molecular static relaxations and a Monte Carlo process. The strain field and the displacement field of the non-uniformly alloyed quantum dot have been calculated using finite element ana...

Descrizione completa

Dettagli Bibliografici
Autori principali:	Lang, C, Nguyen-Manh, D, Cockayne, D
Natura:	Conference item
Pubblicazione:	2004

Documenti analoghi

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
di: Lang, C, et al.
Pubblicazione: (2003)

Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
di: Lang, C, et al.
Pubblicazione: (2005)

GeSi quantum dots: the effect of alloying on the shape transformation
di: Lang, C, et al.
Pubblicazione: (2003)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
di: Liao, X, et al.
Pubblicazione: (2001)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
di: Liao, X, et al.
Pubblicazione: (2002)

Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
di: Lang, C, et al.
Pubblicazione: (2006)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
di: Liao, X, et al.
Pubblicazione: (2004)

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
di: Liao, X, et al.
Pubblicazione: (2001)

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
di: Goldfarb, I, et al.
Pubblicazione: (1999)

Band-offset determination and excitons in SiGe/Si(001) quantum wells
di: Cheng, H, et al.
Pubblicazione: (2000)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
di: Zou, J, et al.
Pubblicazione: (2002)

Strain relaxation by alloying effects in Ge islands grown on Si(001)
di: Liao, X, et al.
Pubblicazione: (1999)

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
di: Thomas McJunkin, et al.
Pubblicazione: (2022-12-01)

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
di: Cui Jian, et al.
Pubblicazione: (2011-01-01)

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film
di: Hamza Qayyum, et al.
Pubblicazione: (2016-05-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
di: Aleksei V. Kolesnikov, et al.
Pubblicazione: (2015-03-01)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
di: Brehm M, et al.
Pubblicazione: (2010-01-01)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
di: Brian Paquelet Wuetz, et al.
Pubblicazione: (2022-12-01)

Nucleation and growth of CoSi2 dots on Si(001)
di: Goldfarb, I, et al.
Pubblicazione: (1999)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
di: Jian-Huan Wang, et al.
Pubblicazione: (2021-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
di: Ma Yingjie, et al.
Pubblicazione: (2011-01-01)

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate
di: Oumaima Abouzaid, et al.
Pubblicazione: (2020-12-01)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
di: Owen, J, et al.
Pubblicazione: (1997)

Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate
di: Bose, Sumanta, et al.
Pubblicazione: (2014)

Stress and relief of misfit strain of Ge/Si(001)
di: Wedler, G, et al.
Pubblicazione: (1998)

Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
di: Liao, X, et al.
Pubblicazione: (2000)

First principles study of GeSi exchange mechanisms at the Si(001) surface
di: Zipoli, F, et al.
Pubblicazione: (2008)

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
di: Yuryev Vladimir, et al.
Pubblicazione: (2011-01-01)

Collective Modes in the Luminescent Response of Si Nanodisk Chains with Embedded GeSi Quantum Dots
di: Vladimir A. Zinovyev, et al.
Pubblicazione: (2023-11-01)

Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
di: Viktoriia Kornich, et al.
Pubblicazione: (2018-05-01)

Electromodulated reflectance study of self-assembled Ge/Si quantum dots
di: Yakimov Andrew, et al.
Pubblicazione: (2011-01-01)

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy
di: Luis Fabián Peña, et al.
Pubblicazione: (2024-03-01)

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)
di: Taojie Zhou, et al.
Pubblicazione: (2020-02-01)

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
di: Ihor I. Izhnin, et al.
Pubblicazione: (2017-02-01)

Sensitively Site‐Dependent Enhancement of Emissions from Ge Quantum Dots in SiGe Microdisks
di: Ningning Zhang, et al.
Pubblicazione: (2022-12-01)

Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate
di: Mourad Baira, et al.
Pubblicazione: (2019-03-01)

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
di: Walz, J, et al.
Pubblicazione: (1999)

Competing growth mechanisms of Ge/Si(001) coherent clusters
di: Goldfarb, I, et al.
Pubblicazione: (1997)

Characterisation of the structure and composition of quantum dots
di: Cockayne, D, et al.
Pubblicazione: (2001)

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
di: Reem Al-Saigh, et al.
Pubblicazione: (2018-06-01)