Progress towards high power thin film diamond transistors

Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper, commercially accessible polycrystalline t...

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Hlavní autoři: Looi, H, Pang, L, Whitfield, MD, Foord, J, Jackman, R
Médium: Conference item
Vydáno: 1999