Progress towards high power thin film diamond transistors
Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper, commercially accessible polycrystalline t...
| Main Authors: | , , , , |
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| Format: | Conference item |
| Published: |
1999
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