The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) and ultrashort charge carrier lifetimes (1–5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Journal article |
| Published: |
IOP Publishing
2017
|