The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) and ultrashort charge carrier lifetimes (1–5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches...
| Những tác giả chính: | , , , , , , , , |
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| Định dạng: | Journal article |
| Được phát hành: |
IOP Publishing
2017
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