Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation
We present resonant femtosecond pump-probe reflectance measurements of excitons in high quality wurtzite GaN epilayers for a range of lattice temperatures and various pump intensities. From the density dependence of the excitonic bleaching we find that the Mott density is n(Mott) less than or equal...
| Main Authors: | , , , , , |
|---|---|
| Format: | Conference item |
| Published: |
1999
|