Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Detalhes bibliográficos
Principais autores: Devynck, F, Giustino, F, Broqvist, P, Pasquarello, A
Formato: Journal article
Publicado em: 2007

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