Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Detalles Bibliográficos
Main Authors: Devynck, F, Giustino, F, Broqvist, P, Pasquarello, A
Formato: Journal article
Publicado: 2007
Descripción
Summary:

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