Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Manylion Llyfryddiaeth
Prif Awduron:	Devynck, F, Giustino, F, Broqvist, P, Pasquarello, A
Fformat:	Journal article
Cyhoeddwyd:	2007

Eitemau Tebyg

Abrupt model interface for the 4H(1000)SiC-SiO2 interface
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Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
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Atomic-scale modelling of the Si(100)-SiO(2) interface
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Electronic structure at realistic Si(100)-SiO2 interfaces
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Infrared spectra at surfaces and interfaces from first principles: evolution of the spectra across the Si(100)-SiO2 interface.
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Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
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Calculating Study on Properties of Al (111)/6H-SiC (0001) Interfaces
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Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties
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Dielectric and infrared properties of ultrathin SiO2 layers on Si(100)
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Band offsets at the Si/SiO2 interface from many-body perturbation theory
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Band offsets at the Si/SiO2 interface from many-body perturbation theory.
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Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface
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Si doping superlattice structure on 6H-SiC(0001)
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Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides
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Ultrahigh Vacuum Preparation and Passivation of Abrupt SiO2/Si(111) Interfaces
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Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates
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Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3
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Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
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Intercalation of Au Atoms into SiC(0001)/Buffer Interfaces–A First-Principles Density Functional Theory Study
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Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition
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Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations
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Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface
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Characterization of SiO<sub>2</sub>/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
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Effects of Al on epitaxial graphene grown on 6H-SiC(0001)
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Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
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First-principles theory of infrared absorption spectra at surfaces and interfaces: Application to the Si(100): H(2)O surface
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The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001)
gan: Chia-Hsiu Hsu, et al.
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Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD
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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
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Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps
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Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface
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Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification
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Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface
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Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
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Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2
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N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
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Synthesis of biomorphic SiC and SiO2 ceramics
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