Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Bibliografski detalji
Glavni autori:	Devynck, F, Giustino, F, Broqvist, P, Pasquarello, A
Format:	Journal article
Izdano:	2007

Slični predmeti

Abrupt model interface for the 4H(1000)SiC-SiO2 interface
od: Devynck, F, i dr.
Izdano: (2005)

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
od: Devynck, F, i dr.
Izdano: (2007)

Atomistic model of the 4H(0001)SiC-SiO2 interface: Structural and electronic properties
od: Devynck, F, i dr.
Izdano: (2007)

Atomic-scale modelling of the Si(100)-SiO(2) interface
od: Giustino, F, i dr.
Izdano: (2005)

Electronic structure at realistic Si(100)-SiO2 interfaces
od: Giustino, F, i dr.
Izdano: (2004)

Infrared spectra at surfaces and interfaces from first principles: evolution of the spectra across the Si(100)-SiO2 interface.
od: Giustino, F, i dr.
Izdano: (2005)

Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
od: Godet, J, i dr.
Izdano: (2007)

Calculating Study on Properties of Al (111)/6H-SiC (0001) Interfaces
od: Changqing Wang, i dr.
Izdano: (2020-09-01)

Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties
od: Giustino, F, i dr.
Izdano: (2005)

Modeling of Si 2p core-level shifts at Si-(ZrO(2))(x)(SiO(2))(1-x) interfaces
od: Giustino, F, i dr.
Izdano: (2002)

Dielectric and infrared properties of ultrathin SiO2 layers on Si(100)
od: Giustino, F, i dr.
Izdano: (2006)

Band offsets at the Si/SiO2 interface from many-body perturbation theory
od: Shaltaf, R, i dr.
Izdano: (2008)

Band offsets at the Si/SiO2 interface from many-body perturbation theory.
od: Shaltaf, R, i dr.
Izdano: (2008)

Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface
od: Mitsuru Sometani, i dr.
Izdano: (2023-11-01)

Si doping superlattice structure on 6H-SiC(0001)
od: Li Lianbi, i dr.
Izdano: (2017-01-01)

Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides
od: Giustino, F, i dr.
Izdano: (2004)

Bi-intercalated epitaxial graphene on SiC(0001)
od: Susanne Wolff, i dr.
Izdano: (2024-01-01)

Ultrahigh Vacuum Preparation and Passivation of Abrupt SiO2/Si(111) Interfaces
od: Bert Stegemann, i dr.
Izdano: (2007-12-01)

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates
od: Changming Fang, i dr.
Izdano: (2024-11-01)

Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3
od: Koji Ito, i dr.
Izdano: (2024-01-01)

Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
od: Takuma Kobayashi, i dr.
Izdano: (2017-04-01)

Intercalation of Au Atoms into SiC(0001)/Buffer Interfaces–A First-Principles Density Functional Theory Study
od: Amirhossein Bayani, i dr.
Izdano: (2020-06-01)

Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition
od: Hiroki Fujimoto, i dr.
Izdano: (2024-01-01)

Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations
od: Kang Liu, i dr.
Izdano: (2017-08-01)

Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface
od: Mitsuaki Kaneko, i dr.
Izdano: (2023-09-01)

Characterization of SiO<sub>2</sub>/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
od: Patrick Fiorenza, i dr.
Izdano: (2019-06-01)

Effects of Al on epitaxial graphene grown on 6H-SiC(0001)
od: C Xia, i dr.
Izdano: (2014-01-01)

Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
od: Xiaozhe Yang, i dr.
Izdano: (2019-03-01)

First-principles theory of infrared absorption spectra at surfaces and interfaces: Application to the Si(100): H(2)O surface
od: Giustino, F, i dr.
Izdano: (2008)

The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001)
od: Chia-Hsiu Hsu, i dr.
Izdano: (2015-01-01)

Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD
od: R. E. Beisenov, i dr.
Izdano: (2013-01-01)

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
od: F Fromm, i dr.
Izdano: (2013-01-01)

Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps
od: Mitsuharu Uemoto, i dr.
Izdano: (2024-01-01)

Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface
od: Wenbo Li, i dr.
Izdano: (2015-01-01)

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification
od: M. Temmen, i dr.
Izdano: (2013-10-01)

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface
od: Efi Dwi Indari, i dr.
Izdano: (2019-04-01)

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
od: Andrew L Walter, i dr.
Izdano: (2013-01-01)

Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2
od: Runze Wang, i dr.
Izdano: (2024-01-01)

N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
od: Hironori Yoshioka, i dr.
Izdano: (2015-01-01)

Synthesis of biomorphic SiC and SiO2 ceramics
od: Egelja Adela, i dr.
Izdano: (2008-01-01)