Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging

Electron channelling contrast imaging (ECCI) has been used to image misfit dislocations between single epitaxial layers (epilayers) of In0·2Ga0·8As grown on GaAs (001). Bulk specimens of the as-grown material were examined over a range of epilayer thickness from 25 to 3000 nm. Spectral analysis of E...