Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging
Electron channelling contrast imaging (ECCI) has been used to image misfit dislocations between single epitaxial layers (epilayers) of In0·2Ga0·8As grown on GaAs (001). Bulk specimens of the as-grown material were examined over a range of epilayer thickness from 25 to 3000 nm. Spectral analysis of E...
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| Formáid: | Journal article |
| Foilsithe / Cruthaithe: |
1996
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| _version_ | 1826285277719560192 |
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| author | Wilkinson, A |
| author_facet | Wilkinson, A |
| author_sort | Wilkinson, A |
| collection | OXFORD |
| description | Electron channelling contrast imaging (ECCI) has been used to image misfit dislocations between single epitaxial layers (epilayers) of In0·2Ga0·8As grown on GaAs (001). Bulk specimens of the as-grown material were examined over a range of epilayer thickness from 25 to 3000 nm. Spectral analysis of ECCI intensity traces was used to establish whether strain fields from the individual dislocations overlapped. Significant overlapping of strain fields was first observed at an epilayer thickness of 100nm which corresponds well to the onset of macroscopic strain relaxation. |
| first_indexed | 2024-03-07T01:26:25Z |
| format | Journal article |
| id | oxford-uuid:922159cd-8cf0-4de0-852e-2d05fa967e34 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T01:26:25Z |
| publishDate | 1996 |
| record_format | dspace |
| spelling | oxford-uuid:922159cd-8cf0-4de0-852e-2d05fa967e342022-03-26T23:23:25ZObservation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imagingJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:922159cd-8cf0-4de0-852e-2d05fa967e34Symplectic Elements at Oxford1996Wilkinson, AElectron channelling contrast imaging (ECCI) has been used to image misfit dislocations between single epitaxial layers (epilayers) of In0·2Ga0·8As grown on GaAs (001). Bulk specimens of the as-grown material were examined over a range of epilayer thickness from 25 to 3000 nm. Spectral analysis of ECCI intensity traces was used to establish whether strain fields from the individual dislocations overlapped. Significant overlapping of strain fields was first observed at an epilayer thickness of 100nm which corresponds well to the onset of macroscopic strain relaxation. |
| spellingShingle | Wilkinson, A Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging |
| title | Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging |
| title_full | Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging |
| title_fullStr | Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging |
| title_full_unstemmed | Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging |
| title_short | Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging |
| title_sort | observation of strain distributions in partially relaxed in0 2ga0 8as on gaas using electron channelling contrast imaging |
| work_keys_str_mv | AT wilkinsona observationofstraindistributionsinpartiallyrelaxedin02ga08asongaasusingelectronchannellingcontrastimaging |