THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS
The thermal and UV photon-induced interaction between WF6 and Si(100) has been examined using AES and thermal desorption mass spectrometry. At 77 K WF6 physisorbs on the silicon surface. Above 150 K dissociative chemisorption phases are formed, which decompose in three distinct stages as the tempera...
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
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1988
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| _version_ | 1797082456659066880 |
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| author | Jackman, R Foord, J |
| author_facet | Jackman, R Foord, J |
| author_sort | Jackman, R |
| collection | OXFORD |
| description | The thermal and UV photon-induced interaction between WF6 and Si(100) has been examined using AES and thermal desorption mass spectrometry. At 77 K WF6 physisorbs on the silicon surface. Above 150 K dissociative chemisorption phases are formed, which decompose in three distinct stages as the temperature is raised in the range 300-900 K to desorb silicon fluoride and produce a Si/W interface. The results suggest that WF6 rapidly forms a thin corrosion film on Si(100) above 300 K which exerts a pronounced passivating effect as the layer begins to thicken. Rapid reaction requires Si interdiffusion into this growing film and desorption of silicon fluorides; hence the steady state reaction rate increases markedly in the temperature regime 300-400 K where the rate of these processes rises to become comparable to the WF6 flux to the surface. Spontaneous evolution of SiFx species is observed as a competing pathway to chemisorption and the origin of this phenomenon is discussed. Low intensity UV light from a deuterium lamp is found to have no effect on the dissociative states formed by WF6 on Si(100). In contrast, photon irradiation is found to bring about the rapid dissociation of molecularly absorbed WF6, resulting in the formation of surface species which evolve SiF4 at significantly lower temperatures than for the thermal process. © 1988. |
| first_indexed | 2024-03-07T01:28:22Z |
| format | Journal article |
| id | oxford-uuid:92bc10c4-f627-45b9-8cb7-cbdb0e470feb |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:28:22Z |
| publishDate | 1988 |
| record_format | dspace |
| spelling | oxford-uuid:92bc10c4-f627-45b9-8cb7-cbdb0e470feb2022-03-26T23:27:37ZTHE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONSJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:92bc10c4-f627-45b9-8cb7-cbdb0e470febEnglishSymplectic Elements at Oxford1988Jackman, RFoord, JThe thermal and UV photon-induced interaction between WF6 and Si(100) has been examined using AES and thermal desorption mass spectrometry. At 77 K WF6 physisorbs on the silicon surface. Above 150 K dissociative chemisorption phases are formed, which decompose in three distinct stages as the temperature is raised in the range 300-900 K to desorb silicon fluoride and produce a Si/W interface. The results suggest that WF6 rapidly forms a thin corrosion film on Si(100) above 300 K which exerts a pronounced passivating effect as the layer begins to thicken. Rapid reaction requires Si interdiffusion into this growing film and desorption of silicon fluorides; hence the steady state reaction rate increases markedly in the temperature regime 300-400 K where the rate of these processes rises to become comparable to the WF6 flux to the surface. Spontaneous evolution of SiFx species is observed as a competing pathway to chemisorption and the origin of this phenomenon is discussed. Low intensity UV light from a deuterium lamp is found to have no effect on the dissociative states formed by WF6 on Si(100). In contrast, photon irradiation is found to bring about the rapid dissociation of molecularly absorbed WF6, resulting in the formation of surface species which evolve SiF4 at significantly lower temperatures than for the thermal process. © 1988. |
| spellingShingle | Jackman, R Foord, J THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS |
| title | THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS |
| title_full | THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS |
| title_fullStr | THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS |
| title_full_unstemmed | THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS |
| title_short | THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS |
| title_sort | interaction of wf6 with si 100 thermal and photon induced reactions |
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